Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials

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Tilmann, R. and Weià , C. and Cullen, C.P. and Peters, L. and Hartwig, O. and Höltgen, L. and Stimpel-Lindner, T. and Knirsch, K.C. and McEvoy, N. and Hirsch, A. and Duesberg, G.S., Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials, Advanced Electronic Materials, 2021

Abstract

Non-covalent functionalization of layered 2D materials is an essential tool to modify and fully harness their optical, electrical, and chemical properties. Herein, a facile method enabling the selective formation of self-assembled monolayers (SAMs) of perylene bisimide (PBI) on transition metal dichal- cogenides (TMDs), directly on the growth substrate (on-chip), is presented. Laterally-resolved infrared atomic force microscopy (AFM-IR) and time-of- flight secondary ion mass spectrometry (TOF-SIMS) are applied as superior techniques to gain detailed information beyond traditional surface analysis techniques, such as Raman spectroscopy and AFM, on TMD/PBI structures. The highly selective functionalization conducted in organic solution on MoS  and WSe  opens up a pathway to controllable, versatile functionalization of layered materials, which is highly sought after for its potential in passiva- tion, tuning of properties and applications in optics, electronics, and (bio-) sensing.

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Sponsor: Science Foundation Ireland (SFI)
Grant Number: PI_15/IA/3131

Sponsor: Science Foundation Ireland (SFI)
Grant Number: 5/SIRG/3329

Type of material: Journal Article