• Resistive switching mechanism of GeTe-Sb<inf>2</inf>Te<inf>3</inf>interfacial phase change memory and topological properties of embedded two-dimensional states

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    2017

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    openAccess

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    Nakamura, H. and Rungger, I. and Sanvito, S. and Inoue, N. and Tominaga, J. and Asai, Y., Resistive switching mechanism of GeTe-Sb<inf>2</inf>Te<inf>3</inf>interfacial phase change memory and topological properties of embedded two-dimensional states, Nanoscale, 9, 27, 2017, 9386-9395

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    cited By 2

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    https://hdl.handle.net/2262/112142

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    Physics (Scholarly Publications)

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    Author's Homepage: http://people.tcd.ie/sanvitos

    Author: SANVITO, STEFANO

    Type of material: Journal Article