Growth and characterization of epitaxial Ti3GeC2 thin films on 4 H-SiC(0 0 0 1)

Abstract

Epitaxial Ti3GeC2 thin films were deposited on 4? off-cut 4 H-SiC(0 0 0 1) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {1 1 2? 0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.