Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Abstract

We investigate the interface characteristics of graphene-silicon Schottky barrier diodes using dc current-voltage measurements and ac impedance spectroscopy (IS). Diode parameters, including the ideality factor and the Schottky barrier height (SBH), are extracted from the experimental data. In particular, IS makes it possible not only to define the influence of additional capacitive components due to the metal electrode contact area of the device by using a proper equivalent circuit model for the analysis but also to extract a more reliable SBH value. Therefore, we expect that IS could be widely utilized for research on the interfaces of various graphene-based devices.