• Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

    Thumbnail Image

    Files

    Inverted.pdf (292.88 KB)

    Date

    2009

    Authors

    Journal Title

    Journal ISSN

    Volume Title

    Publisher

    Access

    Embargo end date

    Citation

    C. Fowley, B. S. Chun, H. C. Wu, M. Abid, J. U. Cho, S. J. Noh, Y. K. Kim. I. V. Shvets, J. M. D. Coey, Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer, Applied Physics Letters, 95, 22, 2009, 222506-

    Abstract

    We report an oscillation of the giant magnetoresistance GMR ratio as a function of Ru layer thickness in the CoFe/Cu/ CoFe/Ru/CoFe SAF/Cu/CoFe/IrMn dual spin valve SV structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling IEC . The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.

    Description

    PUBLISHED

    URI

    http://hdl.handle.net/2262/40313

    Collections

    Physics (Scholarly Publications)
    RSS Feeds

    Endorsement

    Review

    Supplemented By

    Referenced By

    Keywords

    Atomic, molecular and chemical physics, antiferromagnetic

    Sponsor: Science Foundation Ireland (SFI)

    Author's Homepage: http://people.tcd.ie/ivchvets

    Author: SHVETS, IGOR

    Author: COEY, JOHN

    Author: FOWLEY, CIARAN

    Author: WU, HAN-CHUN

    Type of material: Journal Article