Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy
Citation:
G. Feng, H. C. Wu, J. F. Feng and J. M. D. Coey, Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy, Applied Physics Letters, 99, 4, 2011, 042502-Download Item:
Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy.pdf (Published (publisher's copy) - Peer Reviewed) 427.5Kb
Abstract:
We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlO(x) barriers and (Co/Pt)(3) multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)(3) stacks. The different temperature dependence of two (Co/Pt)(3) stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlO(x) barrier.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
2005/IN/1850
Higher Education Authority (HEA)
Author's Homepage:
http://people.tcd.ie/jcoeyhttp://people.tcd.ie/wuh2
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PUBLISHED
Author: COEY, JOHN; WU, HAN-CHUN
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Applied Physics Letters99
4
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