Influence of the annealing field strength on exchange bias and magnetoresistance of spin valves with IrMn

Abstract

We report on field annealing effects in spin valves with an IrMn pinning layer and spin valves with a synthetic antiferromagnet. The exchange bias field and magnetoresistance of spin valves with an IrMn/CoFe bilayer at the bottom improve drastically upon annealing in large magnetic fields. The evolution of the exchange bias field with annealing field strength shows a rapid increase up to an applied field of 0.5 T, which is followed by a more gradual improvement up to an annealing field of 5.5 T. The increase of the exchange bias field in large magnetic fields indicates that the interfacial spin structure of the IrMn layer is directly influenced by the annealing field strength.