Effect of sample bias on backscattered ion spectroscopy in the helium ion microscope
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2010Citation:
G. Behan, J. F. Feng, H. Z. Zhang, P. N. Nirmalraj, and J. J. Boland, Effect of sample bias on backscattered ion spectroscopy in the helium ion microscope, Journal of Vacuum Science & Technology A, 28, 1377, 2010Download Item:
JVTAD62861377_1.pdf (Published (author's copy) - Peer Reviewed) 316.1Kb
Abstract:
The authors present experimental results showing the effect of an applied bias voltage on backscattered ion spectra acquired from thin films of ruthenium and hafnia in the helium ion microscope. A characteristic peak associated with the presence of a thin layer of material is observed to shift as a function of sample bias voltage. The magnitude of this shift is measured, and the authors qualitatively estimate the composition of their samples as well as investigate the neutralization of ions by the sample in the helium ion micoscope (HeIM). They discuss the phenomenona in terms of thin films of ruthenium and hafnia and show the implications of these results on HeIM spectroscopy.
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Science Foundation Ireland
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http://people.tcd.ie/gbehanhttp://people.tcd.ie/jboland
http://people.tcd.ie/hozhang
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Journal ArticleSeries/Report no:
Journal of Vacuum Science & Technology A28
1377
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Full text availableKeywords:
Helium Ion, Thin films, Ruthenium, Hafnium DioxideLicences: