Strain effect on the optical nonlinearity in an InGaAs/GaAs asymmetric Fabry-Perot modulator.
Citation:
Moloney, M. H.; Heffernan, J. F.; Hegarty, J.; Grey, R.; Woodhead, J., Strain effect on the optical nonlinearity in an InGaAs/GaAs asymmetric Fabry-Perot modulator., Applied Physical Letters, 63, 4, 1993, 435 - 437Download Item:
Abstract:
The effect of strain on the optical nonlinearities and operation of an all-optical asymmetric
Fabry-Perot italon is investigated. A high reflectivity modulation of 60% is reported with a
contrast ratio of 12.2:1 and insertion loss of 1.87 dB. High contrast is achieved through
absorption matching requiring a thick active layer. The effect of a thick structure on the strain
reduced saturation carrier density is measured. The saturation density is calculated to be a factor
of 2.5 less than in a similar GaAs modulator, showing thicker strained devices still display the
advantages of thinner structures.
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http://people.tcd.ie/jhegartyDescription:
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Author: HEGARTY, JOHN
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American Physical SocietyType of material:
Journal ArticleSeries/Report no:
Applied Physical Letters;63;
4;
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