Strain effect on the optical nonlinearity in an InGaAs/GaAs asymmetric Fabry-Perot modulator.
Item Type:Journal Article
Citation:Moloney, M. H.; Heffernan, J. F.; Hegarty, J.; Grey, R.; Woodhead, J., Strain effect on the optical nonlinearity in an InGaAs/GaAs asymmetric Fabry-Perot modulator., Applied Physical Letters, 63, 4, 1993, 435 - 437
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The effect of strain on the optical nonlinearities and operation of an all-optical asymmetric Fabry-Perot italon is investigated. A high reflectivity modulation of 60% is reported with a contrast ratio of 12.2:1 and insertion loss of 1.87 dB. High contrast is achieved through absorption matching requiring a thick active layer. The effect of a thick structure on the strain reduced saturation carrier density is measured. The saturation density is calculated to be a factor of 2.5 less than in a similar GaAs modulator, showing thicker strained devices still display the advantages of thinner structures.
Author: HEGARTY, JOHN
Publisher:American Physical Society
Type of material:Journal Article
Series/Report no:Applied Physical Letters;
Availability:Full text available