Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector
Citation:
A. Salokatve, K. Rakennus, P. Uusimaa, M. Pessa, T. Aherne, J. P. Doran, J. O'Gorman, and J. Hegarty, Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector, Applied Physics Letters, 67, 3, 1995, 407 - 409Download Item:
Abstract:
A Bragg reflector consisting of a 25-period MnZnSSe/ZnSSE Bragg stack is reported. The II?VI
semiconductor structure was grown by molecular beam epitaxy on a GaAs ~100! epilayer. Structural
characterization of the Bragg reflector was performed with double crystal x-ray diffraction and
transmission electron microscopy. These studies indicated that the epitaxial II?VI structure, whose
total thickness is about 2150 nm, remains pseudomorphic with the GaAs substrate. The Bragg stack
has a maximum reflectance of 81% at 468 nm. This result shows that fabrication of high reflectance
mirrors from epitaxial ZnSe-based II?VI compounds is possible in spite of relatively small
refractive index differences between constituent II?VI layers.
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http://people.tcd.ie/jhegartyDescription:
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Author: HEGARTY, JOHN
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Journal ArticleSeries/Report no:
Applied Physics Letters67
3
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