Browsing Administrative Staff Authors (Scholarly Publications) by Author "Mc Evoy, Niall"
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Environmental effects on the electrical characteristics of back-gated WSe2 field-effect transistors
Mc Evoy, Niall; Urban, Francesca; Martucciello, Nadia; Peters, Lisanne; Di Bartolomeo, Antonio (2018)We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer WSe2 back-gated transistors with Ni/Au contacts. Our investigation shows that the removal of a layer ... -
Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films
Mc Evoy, Niall; Duesberg, Georg; Wagner, Stefan; Yim, Chanyoung; Kataria, Satender; Yokaribas, Volkan; Kuc, Agnieszka; Pindl, Stephan; Fritzen, Claus-Peter; Heine, Thomas; Lemme, Max C. (2018)Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe2), an exciting and unexplored 2D transition metal ... -
In Situ Formed Protective Barrier Enabled by Sulfur at Titanium Carbide (MXene) Ink for Achieving High-Capacity, Long Lifetime Li-S Batteries
Mc Evoy, Niall; Nicolosi, Valeria; Duesberg, Georg; Pakdel, Amir (2018) -
Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation
Duesberg, Georg; Mc Evoy, Niall; O'Brien, Maria; Kim, HyunJeong; Yim, Chanyoung; Marcia, Mario; Hauke, Frank; Hirsh, Andreas; Kim, Gyu-Tae; Duesberg, Georg S.; Kim, WungYeon (2018)Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapourdeposition (CVD) on SiO2are reported. The dangling-bond-freesurface of MoS2was functionalised ... -
Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes
Mc Evoy, Niall; Duesberg, Georg; Yim, Chanyoung; Riazimehr, Sarah; Gity, Farzan; Schneider, Daniel S.; Monaghan, Scott; Hurley, Paul K.; Lemme, Max C.; Duesberg, Georg S. (2018)Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report ...