Browsing Physics (Scholarly Publications) by Author "FENG, JIA-FENG"
Now showing items 1-10 of 10
-
Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
COEY, JOHN MICHAEL DAVID; FENG, JIA-FENG (2010)MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) ... -
Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
FENG, GEN; FENG, JIA-FENG; VAN, DIJKEN SEBASTIAN; COEY, JOHN MICHAEL DAVID (American Institute of Physics, 2009)Co40Fe40B20/MgO single and double barrier magnetic tunnel junctions (MTJs) were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. ... -
Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions
FENG, GEN; FENG, JIA-FENG; COEY, JOHN MICHAEL DAVID (Elsevier, 2009)MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir22Mn78 or Fe50Mn50 (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling ... -
The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions
COEY, JOHN MICHAEL DAVID; FENG, JIA-FENG (2010)We demonstrate that high-quality magnetic tunnel junctions with Co40Fe40B20 electrodes and crystalline MgO barriers, which show a 230% tunneling magnetoresistance ratio at room temperature, can be successfully fabricated ... -
Magnetic noise in MgO-based magnetic tunnel junction rings
COEY, JOHN; FENG, JIA-FENG; DIAO, ZHU (2010)Magnetization switching is investigated in ring-shaped MgO-based magnetic tunnel junctions with 168% tunneling magnetoresistance. Besides the forward and reverse onion states, two vortex states and several metastable ... -
Magnetic Properties of Exchange-Biased [Co/Pt](n) Multilayer With Perpendicular Magnetic Anisotropy
COEY, JOHN; FENG, JIA-FENG; DIAO, ZHU (2010)Perpendicular exchange-biased [Co/Pt](3)/Co(t(Co))/IrMn and IrMn/Co(t(Co))/Pt/[Co/Pt](3) multilayers have been fabricated, changing the thickness (t(Co)) of the cobalt that is next to the IrMn layer. The crystal structure, ... -
Reduced low frequency noise in electron beam evaporated MgO magnetic tunnel junctions
COEY, JOHN; FENG, JIA-FENG; DIAO, ZHU; KURT, HUSEYIN (2010)We compare low frequency noise in magnetic tunnel junctions with MgO barriers prepared by electron-beam evaporation with those prepared by radiofrequency sputtering, both showing a high tunneling magnetoresistance. The ... -
Superparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode
COEY, JOHN; FENG, JIA-FENG; VENKATESAN, MUNUSWAMY (2010)MgO-based magnetic tunnel junctions have been fabricated with a thin Co40Fe40B20 (CoFeB) layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB stack. An inverted tunneling magnetoresistance is observed due to the ... -
Temperature dependence of inverted tunneling magnetoresistance in MGO-based magnetic tunnel junctions
COEY, JOHN MICHAEL DAVID; FENG, JIA-FENG (2010)MgO-based magnetic tunnel junctions (MTJs) of the following main structure: Ir22Mn78 (10 nm) /Co90Fe10 (2 nm) /Ru (0.85 nm) /CoFeB (0.5t<2 nm) /MgO (2.5 nm) /CoFeB (3 nm) have been fabricated, with a thin CoFeB layer in ...