Investigation of transport through interfacial barriers between metals and semiconductors
Citation:
Catherine Boothman, 'Investigation of transport through interfacial barriers between metals and semiconductors', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2009, pp 233Download Item:
Abstract:
Electrical spin injection from a ferromagnetic metal source into a semiconductor can
only take place through an interfacial barrier (Rashba, Phys. Rev. B 62, R16267 and
Phys. Rev. B 68, 241310). This thesis presents a study of electrical transport through
what can be roughly described as two different junction systems, ferromagnetic metal /
semiconductor junctions and ferromagnetic metal / insulator / semiconductor junctions
to assess their potential for incorporation into spintronic devices. Transport was studied
as a function of semiconductor material, silicon and gallium arsenide, spin injector source,
Fe3O4 and CogoFe10, temperature, insulator material, AlOx and MgO, and thickness and
finally as a function of junction size. The systems can be broken down as follows; GaAs /
F63O4, Si / Fe3O4, GaAs / AlOx, / Co90Fe10, GaAs / MgO / Co90Fe10, Si / AlOx / Co90Fe10
and Si / MgO / Co90Fe10- The tunnel barrier (insulator) thickness was increased from 0
nm in 1 nm steps. Alost junctions were fabricated on mid n-type substrates but initially
mid p-type and high n and p-type were also used.
Author: Boothman, Catherine
Advisor:
Donegan, JohnQualification name:
Doctor of Philosophy (Ph.D.)Publisher:
Trinity College (Dublin, Ireland). School of PhysicsNote:
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Physics, Ph.D., Ph.D. Trinity College Dublin.Metadata
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