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Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications
(2007)
The use of co-evaporation of ZnCl2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current–voltage (IV) characteristics in the range of ±4 V have been measured using Cu–Au electrical ...
Tunable and efficient long range energy transfer via graphene plasmon modes
(2015)
We present a theoretical investigation of the energy transfer efficiency between quantum systems placed in the vicinity of a doped graphene layer using a Green's tensor formalism. The direct interaction, Förster mechanism, ...
Room-temperature ultraviolet luminescence from g-CuCl on silicon
(2005)
We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, γ-CuCl on Si. This material system is compatible with ...
Photonic molecules modes in resonantly coupled spherical microcavities with semiconductor nanocrystals
(2005)
We present a detailed study of the localized coupled-cavity modes in a photonic molecule formed from two dielectric spherical microcavities with CdTe nanocrystals, which show a multi-peak narrowband modal structure resulting ...
Two-dimensional Förster resonant energy transfer in a mixed quantum dot monolayer: Experiment and theory
(2009)
Energy transfer in monolayers of CdTe quantum dots (QDs), comprised of QDs of two different sizes, has been investigated. Förster resonant energy transfer (FRET) from QD donors to QD acceptors was observed and characterized ...
Influence of quantum dot concentration on F?rster resonant energy transfer in monodispersed nanocrystal quantum dot monolayers
(2010)
The quantum dot (QD) concentration dependence of the optical properties of QD monolayers is shown to be dominated by Forster resonant energy transfer (FRET) from smaller to larger QDs in the ensemble. With increasing QD ...
Modification of the FRET rate in quantum dot structures
(2011)
Förster resonant energy transfer (FRET) can be applied to create energy flow on the nano-scale for light harvesting, colour conversion or sensing applications. The performance of such devices depends on the efficiency of ...
Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes
(2010)
A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary ...
Influence of graphene oxide/Ag nanoparticle composites on the fluorescence properties of organic dyes
(2017)
Graphene oxide/Ag nanoparticle (AgGO) composite materials have been proposed for surface enhanced Raman scattering (SERS) detection of fluorescent dye molecules. In this study we examine the role of the different components ...
Polarization dependent intra-band dynamics in semiconductor optical amplifiers
(2007)
The polarization dependence of gain dynamics in a bulk semiconductor optical amplifier has been investigated using a 2.5 ps pump-probe set-up in a counter-propagation configuration. A theoretical model based on the carrier ...