Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage
Citation:
Y. Wu, I. M. Piper, M. Ediger, P. Brereton, E. R. Schmigdall, P. R. Eastham, M. Hugues, M. Hopkinson and R. T. Phillips, Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage, Physical Review Letters, 106, 2011, 067401Download Item:
Abstract:
Preparation of a speci c quantum state is a required step for a variety of proposed practical uses of
quantum dynamics. We report an experimental demonstration of optical quantum state preparation
in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based
on Rabi
opping in that the method is robust with respect to variation in the optical coupling.
We use adiabatic rapid passage, which is capable of inverting single dots to a speci ed upper level.
We demonstrate that when the pulse power exceeds a threshold for inversion, the nal state is
independent of power. This provides a new
Sponsor
Grant Number
Science Foundation Ireland (SFI)
Author's Homepage:
http://people.tcd.ie/easthampDescription:
PUBLISHED
Author: EASTHAM, PAUL
Type of material:
Journal ArticleCollections
Series/Report no:
Physical Review Letters106
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Nanoscience & Materials , TelecommunicationsMetadata
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