Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
Citation:
Ansari, L. and Monaghan, S. and McEvoy, N. and Ó Coileáin, C. and Cullen, C.P. and Lin, J. and Siris, R. and Stimpel-Lindner, T. and Burke, K.F. and Mirabelli, G. and Duffy, R. and Caruso, E. and Nagle, R.E. and Duesberg, G.S. and Hurley, P.K. and Gity, F., Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C, npj 2D Materials and Applications, 2019, 3, 1Download Item:
Abstract:
In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe2) films as a function offilm thickness. Our electrical measurements, in combination with density functional theorycalculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe2films, and highlight the importance ofincluding van der Waals interactions, Green’s function calibration, and screened Coulomb interactions in the determination of thethickness-dependent PtSe2energy gap. Large-area PtSe2films of varying thickness (2.5–6.5 nm) were formed at 400 °C by thermallyassisted conversion of ultra-thin platinumfilms on Si/SiO2substrates. The PtSe2films exhibitp-type semiconducting behavior withhole mobility values up to 13 cm2/V·s. Metal-oxide-semiconductorfield-effect transistors have been fabricated using the grownPtSe2films and a gatefield-controlled switching performance with anION/IOFFratio of >230 has been measured at roomtemperature for a 2.5–3 nm PtSe2film, while the ratio drops to <2 for 5–6.5 nm-thick PtSe2films, consistent with a semiconducting-to-semimetallic transition with increasing PtSe2film thickness. These experimental observations indicate that the low-temperaturegrowth of semimetallic or semiconducting PtSe2could be integrated into the back-end-of-line of a silicon complementary metal-oxide-semiconductor process.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
15/SIRG/332
Science Foundation Ireland (SFI)
15/IA/3131
Science Foundation Ireland (SFI)
12/RC/2278
Author's Homepage:
http://people.tcd.ie/duesberg
Author: Duesberg, Georg
Type of material:
Journal ArticleCollections
Series/Report no:
npj 2D Materials and Applications;3;
1;
Availability:
Full text availableKeywords:
semiconducting-to-semimetallic transition, quantum confinement, layered platinum diselenide (PtSe2DOI:
http://dx.doi.org/10.1038/s41699-019-0116-4Metadata
Show full item recordLicences: