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dc.contributor.authorShvets, Igor
dc.date.accessioned2021-01-13T11:31:05Z
dc.date.available2021-01-13T11:31:05Z
dc.date.issued2019
dc.date.submitted2019en
dc.identifier.citationWang, J. and Cuccureddu, F. and Ramos, R. and Coileain, C.O. and Shvets, I.V. and Wu, H.-C., Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires, SPIN, 9, 1, 2019en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/94660
dc.description.abstractWe present the possibility of enhancing magnetoresistance by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on the micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature.en
dc.language.isoenen
dc.relation.ispartofseriesSPIN;
dc.relation.ispartofseries9;
dc.relation.ispartofseries1;
dc.rightsYen
dc.subjectMagnetoresistanceen
dc.subjectNanowire arraysen
dc.titleMagnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowiresen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/caffreda
dc.identifier.peoplefinderurlhttp://people.tcd.ie/ivchvets
dc.identifier.rssinternalid206220
dc.identifier.doihttp://dx.doi.org/10.1142/S2010324719500048
dc.rights.ecaccessrightsopenAccess


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