Impurity band magnetism in organic semiconductors
File Type:
PDFItem Type:
Journal ArticleDate:
2019Access:
openAccessCitation:
Droghetti A, Sanvito S, Impurity band magnetism in organic semiconductors, Physical Review B, 99, 9, 2019Download Item:
Abstract:
Recent experiments and theoretical studies have proposed that spin-transport in organic semiconductors, in
particular in Alq3, may occur in an impurity band. Here we model the electronic and magnetic properties of
such an impurity band by treating the effect of disorder in a numerically accurate way. The calculations are
carried out by solving the Anderson-Hubbard model within the mean-field approximation and by accounting for
magnetic excitations via the Bethe-Salpeter equation.We find that some impurities form clusters where electrons
are delocalized, while others develop localized magnetic moments, which are antiferromagnetically correlated.
The excitations of these correlated magnetic moments are spin waves, which can enable spin transport.
URI:
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.094413http://hdl.handle.net/2262/91479
Author's Homepage:
http://people.tcd.ie/sanvitoshttp://people.tcd.ie/droghea
Description:
PUBLISHED
Author: Sanvito, Stefano; Droghetti, Andrea
Type of material:
Journal ArticleURI:
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.99.094413http://hdl.handle.net/2262/91479
Collections
Series/Report no:
Physical Review B99
9
Availability:
Full text availableKeywords:
Defects, Hopping transport, Magnons, Spintronics, Elemental semiconductors, Molecular solids, Hubbard model, Mean field theory, Tight-binding modelDOI:
http://dx.doi.org/10.1103/PhysRevB.99.094413Metadata
Show full item recordLicences: