Nanoscale neuroelectrode modification via sub-20 nm silicon nanowires through self-assembly of block copolymers
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2015Author:
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Mokarian-Tabari, P., Vallejo-Giraldo C., Fernandez-Yague, M., Cummins, C., Morris M. & Biggs, M.J.P. Nanoscale neuroelectrode modification via sub-20 nm silicon nanowires through self-assembly of block copolymers, Journal of Materials Science: Materials in Medicine, 26;120, 2015Download Item:
Abstract:
Neuroelectrodes are susceptible to deterioration via scar encapsulation following implantation. Biologically relevant nanosurfaces which mimic the biological length scale may prevent this deterioration via the modulation of protein adsorption and cell adhesion. Furthermore, nanotopography may significantly enhance electrode performance via enhanced charge transfer.
Here we describe a self-assembly process for the production of aligned and dense arrays of silicon nanopillars using block copolymers[1]. We discuss the effect of the surface modifications on cell-substrate interaction in vitro and how they may enhance electrode charge transfer and improve neuron/electrode integration
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Science Foundation Ireland (SFI)
11/SIRG/B2135
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http://people.tcd.ie/mokariapDescription:
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Author: Mokarian, Parvaneh; Vallejo-Giraldo, Catalina; Fernandez-Yague, Marc; Cummins, Cian; Morris, Michael A.; Biggs, Manus J.P.
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Journal of Materials Science: Materials in Medicine;;26
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Neuroelectrodes nanotopography, Block Copolymer, Paxillin, Iron Nitride, Spin Cast, Solvent Vapor AnnealingDOI:
http://dx.doi.org/10.3389/conf.FBIOE.2016.01.02560Metadata
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