All-printed capacitors from graphene-BN-graphene nanosheet heterostructures
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2016Access:
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Kelly A.G, Finn D, Harvey A, Hallam T, Coleman J.N, All-printed capacitors from graphene-BN-graphene nanosheet heterostructures, Applied Physics Letters, 109, 2, 2016, 023107Download Item:
Abstract:
This work aims to develop methodologies to print pinhole-free, vertically stacked heterostructures by sequential deposition of conductive graphene and dielectric h-BN nanosheet networks. We achieve this using a combination of inkjet printing and spray-coating to fabricate dielectric capacitors in a stacked graphene/BN/graphene arrangement. Impedance spectroscopy shows such heterostructures to act as series combinations of a capacitor and a resistor, with the expected dimensional dependence of the capacitance. The areal capacitance ranges from 0.24 to 1.1 nF/cm2 with an average series resistance of ∼120 kΩ. The sprayed BN dielectrics are pinhole-free for thicknesses above 1.65 μm. This development paves the way toward fabrication of all-printed, vertically integrated, multilayer devices.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
SFI/12/RC/227
European Research Council (ERC)
SEMANTICS
Science Foundation Ireland (SFI for RF)
11/PI/108
Author's Homepage:
http://people.tcd.ie/colemajhttp://people.tcd.ie/hallamt
http://people.tcd.ie/djfinn
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Applied Physics Letters;109;
2;
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http://dx.doi.org/10.1063/1.4958858Metadata
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