Prediction of large bias-dependent magnetoresistance in al l-oxide magnetic tunnel junctions with a ferroelectric barrier
File Type:
PDFItem Type:
Journal ArticleDate:
2011Access:
OpenAccessCitation:
Nuala M. Caffrey, Thomas Archer, Ivan Rungger, and Stefano Sanvito, Prediction of large bias-dependent magnetoresistance in al l-oxide magnetic tunnel junctions with a ferroelectric barrier, Physical Review B, 83, 2011, 125409Download Item:
Abstract:
All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multifunctional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO3/BaTiO3/SrRuO3 MTJ. This incorporates a BaTiO3 barrier which can be found either in a nonferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically controlled magnetic sensors.
Sponsor
Grant Number
European Commission
ATHENA
Science Foundation Ireland (SFI)
07/IN.1/I945
Author's Homepage:
http://people.tcd.ie/sanvitoshttp://people.tcd.ie/archert
Description:
PUBLISHEDType of material:
Journal ArticleCollections
Series/Report no:
Physical Review B83
Availability:
Full text availableSubject (TCD):
Nanoscience & MaterialsMetadata
Show full item recordLicences: