Optical measurement of ion implantation damage depth in multiple-quantum-well mesa structures

Abstract

We have determined the depth of ion implant damage in semiconductor materials by nonlinear optical measurements. The carrier lifetime in ion-implanted mesas was measured by the pump-probe technique, and the carrier diffusion coefficient in unetched material was measured by degenerate four-wave mixing. An effective depth of damage within which the carriers experience fast recombination is then determined by modeling of the carrier dynamics in the mesa structure.