The use of wide-bandgap CuCl on silicon for ultra-violet photonics
Item Type:Conference Paper
Citation:O'Reilly, L., Natarajan, G., McNally, P.J., Daniels, S., Lucas, O.F., Mitra, A., Martinez-Rosas, M., Bradley, A.L., Reader A. & Cameron, D.C. The use of wide-bandgap CuCl on silicon for ultra-violet photonics, Proceedings of SPIE, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, SPIE Opto-Ireland 2005, Dublin,, John G. McInerney, Gerard Farrell, David M. Denieffe, Liam P. Barry, Harold S. Gamble, Padraig J. Hughes, Alan Moore , 5825, 2005, 29-36
5825_3 SPIE Opto IRL 2005 CuCl.pdf (PDF) 88.15Kb
γ-CuCl is a wide-bandgap (Eg = 3.395eV), direct bandgap, semiconductor material with a cubic zincblende lattice structure. Its lattice constant, aCuCl = 0.541 nm, means that the lattice mismatch to Si (aSi = 0.543 nm) is <0.5%. γ-CuCl on Si-the growth of a wide-bandgap, direct bandgap, optoelectronics material on silicon substrates is a novel material system, with compatibility to current Si based electronic/optoelectronics technologies. The authors report on early investigations consisting of the growth of polycrystalline, CuCl thin films on Si (100), Si (111), and quartz substrates by physical vapour deposition. X-ray diffraction (XRD) studies indicate that CuCl grows preferentially in the <111> direction. Photoluminescence (PL) and Cathodoluminescence (CL) reveal a strong room temperature Z3 excitonic emission at ~387nm. A demonstration electroluminescent device (ELD) structure based on the deposition of CuCl on Si was developed. Preliminary electroluminescence measurements confirm UV light emission at wavelengths of ~380nm and ~387nm, due to excitonic behaviour. A further emission occurs in the bandgap region at ~360nm.
Author: Bradley, Louise; O'Reilly, Lisa; Natarajan, Gomathi; McNally, Patrick; Daniels, Stephen; Lucas, Olabanji; Mitra, Anirban; Martinez-Rosas, Miguel; Reader, Alec; Cameron, David C.
Other Titles:Proceedings of SPIE, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks
SPIE Opto-Ireland 2005
Type of material:Conference Paper
Availability:Full text available
Keywords:Copper chloride, Wide-bandgap semiconductor, Ultra-violet, Silicon, Electroluminescence, Cathodoluminescence, Photoluminescence, Exciton