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dc.contributor.authorDuesberg, Georg
dc.contributor.authorMc Evoy, Niall
dc.contributor.authorO'Brien, Maria
dc.contributor.authorKim, HyunJeong
dc.contributor.authorYim, Chanyoung
dc.contributor.authorMarcia, Mario
dc.contributor.authorHauke, Frank
dc.contributor.authorHirsh, Andreas
dc.contributor.authorKim, Gyu-Tae
dc.contributor.authorDuesberg, Georg S.
dc.contributor.authorKim, WungYeon
dc.date.accessioned2019-09-26T15:23:59Z
dc.date.available2019-09-26T15:23:59Z
dc.date.issued2018
dc.date.submitted2018en
dc.identifier.citationKim, H., Kim, W., O'Brien, M., McEvoy, N., Yim, C., Marcia, M., Hauke, F., Hirsch, A., Kim, G. & Duesberg, G.S. Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation. 2018, Nanoscale;, 10;, 37;en
dc.identifier.otherY
dc.identifier.urihttps://pubs.rsc.org/en/content/articlelanding/2018/NR/C8NR02134A#!divAbstract
dc.identifier.urihttp://hdl.handle.net/2262/89565
dc.description.abstractField-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapourdeposition (CVD) on SiO2are reported. The dangling-bond-freesurface of MoS2was functionalised with a perylene bisimidederivative to allow for the deposition of Al2O3dielectric. Thisallowed the fabrication of top-gated, fully encapsulated MoS2FETs. Furthermore, by the definition of vertical contacts on MoS2,devices, in which the channel area was never exposed to polymers,were fabricated. The MoS2FETs showed some of the highest mobi-lities for transistors fabricated on SiO2with Al2O3as the top-gatedielectric reported so far. Thus, gate-stack engineering using inno-vative chemistry is a promising approach for the fabrication ofreliable electronic devices based on 2D materials.en
dc.format.extent17557-17566en
dc.language.isoenen
dc.relation.ispartofseriesNanoscale;
dc.relation.ispartofseries10;
dc.relation.ispartofseries37;
dc.rightsYen
dc.subjectField-effect transistors (FETs)en
dc.subjectMoS2en
dc.subject2D materialsen
dc.subject.lcshField-effect transistors (FETs)en
dc.titleOptimized single-layer MoS2 field-effect transistors by non-covalent functionalisationen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundatiopn Irelanden
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/mcevoyni
dc.identifier.peoplefinderurlhttp://people.tcd.ie/duesberg
dc.identifier.rssinternalid193133
dc.identifier.doihttp://dx.doi.org/10.1039/c8nr02134a
dc.rights.ecaccessrightsopenAccess
dc.contributor.sponsorGrantNumber15/SIRG/3329en
dc.contributor.sponsorGrantNumber12/RC/2278en
dc.contributor.sponsorGrantNumber15/IA/313en
dc.identifier.orcid_id0000-0001-5950-8755


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