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dc.contributor.authorSANVITO, STEFANOen
dc.contributor.authorNARAYAN, AWADHESHen
dc.contributor.authorRUNGGER, IVANen
dc.date.accessioned2016-01-22T17:01:58Z
dc.date.available2016-01-22T17:01:58Z
dc.date.issued2014en
dc.date.submitted2014en
dc.identifier.citationK. Dolui, A. Narayan, I. Rungger, and S. Sanvito, Efficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctions, Physical Review B, 90, 2014, 041401 (R)-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/75642
dc.descriptionPUBLISHEDen
dc.description.abstractWe demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.en
dc.format.extent041401 (R)en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseries90en
dc.rightsYen
dc.subjectgiant magnetoresistanceen
dc.titleEfficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctionsen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorIrish Research Council for Science and Engineering Technology (IRCSET)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/sanvitosen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/narayaaen
dc.identifier.rssinternalid99918en
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.90.041401en
dc.rights.ecaccessrightsopenAccess
dc.contributor.sponsorGrantNumber12/RC/2278en
dc.subject.TCDThemeNanoscience & Materialsen


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