Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator
Citation:
N. Zainal, S. J. N. Mitchell, D. W. McNeill, M. F. Bain, B. M. Armstrong, P. T. Baine, D. Adley, T. S. Perova, Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator, ECS Transactions, 45, 4, 2012, 169 - 180Download Item:
ECS-Transaction-169.pdf (Published (author's copy) - Peer Reviewed) 465.9Kb
Abstract:
Germanium is one of the most promising materials for high
performance infra-red photovoltaic devices. High quality singlecrystal
germanium on insulator structures can be produced by a
Rapid Melt Growth process. Experiments show that thin-film
germanium deposited by physical vapor deposition provides better
quality in comparison with chemical vapor deposition. The
longitudinal optical Ge-Ge peak in Raman spectrum is shifted from
the expected 300.2 cm-1 position due to tensile stress resulting from
the thermal expansion differences of the materials. The importance
of silicon in the rapid melt process is confirmed by the fact that
germanium films on sapphire substrates yielded polycrystalline
structure. Films produced at high temperature (980 oC) show Ge-
Ge Raman peak with linewidth of 3.3 cm-1 indicating good
crystalline quality, comparable to bulk germanium (3.2 cm-1), and
thus demonstrating the potential to produce low cost high quality
germanium films.
Sponsor
Grant Number
Irish Research Council for Science and Engineering Technology (IRCSET)
Postgraduate Award 2008, David Adley
Royal Society
Author's Homepage:
http://people.tcd.ie/perovatDescription:
PUBLISHED
Author: PEROVA, TANIA
Type of material:
Journal ArticleSeries/Report no:
ECS Transactions45
4
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Full text availableSubject (TCD):
Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1149/1.3700467Licences: