Browsing School of Engineering by Subject "Raman spectroscopy; SiGeC layer; stress analysis; substitutional carbon"
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Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopy
(Elsevier, 2009)The effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si1-x-yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The ...