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dc.contributor.authorSANVITO, STEFANOen
dc.contributor.authorRUNGGER, IVANen
dc.date.accessioned2013-07-10T11:13:26Z
dc.date.available2013-07-10T11:13:26Z
dc.date.issued2012en
dc.date.submitted2012en
dc.identifier.citationKun Tao, V.S. Stepanyuk, I. Rungger and S. Sanvito, Tailoring magnetoresistance at the atomic level: An ab initio study, Physical Review B, 85, 4, 2012, 045406-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/66689
dc.descriptionPUBLISHEDen
dc.description.abstractThe possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage.en
dc.description.sponsorshipSS and IR acknowledge the Science Foundation Ireland (Grant No. 07/IN.1/I945) and the King Abdullah University of Science and Technology (ACRAB project)en
dc.format.extent045406en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseries85en
dc.relation.ispartofseries4en
dc.rightsYen
dc.subjectfinite-bias calculationsen
dc.subject.lcshfinite-bias calculationsen
dc.titleTailoring magnetoresistance at the atomic level: An ab initio studyen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/sanvitosen
dc.identifier.rssinternalid78844en
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.85.045406en
dc.contributor.sponsorGrantNumberG20267en
dc.subject.TCDThemeNanoscience & Materialsen
dc.identifier.rssurihttp://prb.aps.org/abstract/PRB/v85/i4/e045406en


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