Show simple item record

dc.contributor.authorSHVETS, IGORen
dc.contributor.authorUSOV, VICTORen
dc.contributor.authorO'COILEAIN, CORMACen
dc.date.accessioned2011-08-30T13:07:26Z
dc.date.available2011-08-30T13:07:26Z
dc.date.issued2011en
dc.date.submitted2011en
dc.identifier.citationC. O Coileain, V. Usov, and I. V. Shvets, Critical field behavior and antiband instability under controlled surface electromigration on Si(111), Physical Review B, 84, 7, 2011, 075318en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/59136
dc.descriptionPUBLISHEDen
dc.description.abstractIn this study we investigate step bunching and antiband surface instabilities on Si(111). We experimentally study the effects of a controlled electromigration field on the onset of antibands. We analyze the initial stage of antiband formation on step bunched surfaces under conditions of constant temperature of 1270 ?C, while systematically varying the applied electromigration field. The relationship between the electromigration field and minimum terrace width required to initiate the antiband formation has been established. Also, we systematically measured values of the critical electromigration field, which is required to initiate the step-bunching process on Si(111) at 1130 ?C (regime II) and 1270 ?C (regime III). The dependence of the critical field on the mean atomic terrace width has been investigated and discussed.en
dc.format.extent075318en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseries84en
dc.relation.ispartofseries7en
dc.rightsYen
dc.subjectFluids and plasma physicsen
dc.subjectSi(111)en
dc.titleCritical field behavior and antiband instability under controlled surface electromigration on Si(111)en
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/ivchvetsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/usovven
dc.identifier.rssinternalid74782en
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.84.075318en
dc.contributor.sponsorGrantNumber06 IN.1/I91en
dc.subject.TCDThemeNanoscience & Materialsen


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record