Micro-Raman and spreading resistance analysis on bevelled implanted germanium for layer transfer applications
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Citation:P. Rainey, Joanna Wasyluk, Tatiana Perova, Richard Hurley, Neil Mitchell, David McNeill, Harold Gamble, and Mervyn Armstrong, Micro-Raman and spreading resistance analysis on bevelled implanted germanium for layer transfer applications, Electrochemical and Solid-State Letters, 14, 2, 2011, H69-H72
Raman and spreading resistance profiling have been used to analyze defects in germanium caused by hydrogen and helium implants, of typical fluences used in layer transfer applications. Beveling has been used to facilitate probing beyond the laser penetration depth. Results of Raman mapping along the projection area reveal that after post-implant annealing at 400?C, some crystal damage remains, while at 600?C, the crystal damage has been repaired. Helium implants create acceptor states beyond the projected range, and for both hydrogen and helium, 1 1016 acceptors/cm2 remain after 600?C. These are thought to be vacancyrelated point defect clusters.
Engineering and Physical Sciences Research Council (EPSRC)
Irish Research Council for Science Engineering and Technology
Irish Heritage Council
Series/Report no:Electrochemical and Solid-State Letters