Anomalous strain relaxation behaviour of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy
ARORA, SUNIL KUMAR
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Citation:S. K. Arora, R. G. S. Sofin, I. V. Shvets, M. Luysberg, Anomalous strain relaxation behaviour of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy, Journal of Applied Physics, 100, 7, 2006, 073908
Strain relaxation studies in epitaxial magnetite (Fe3O4) thin films grown on MgO (100) substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700?nm. This thickness is much greater than the critical thickness tc for strain relaxation estimated from mismatch strain. Anomalous strain relaxation behavior of Fe3O4/MgO heteroepitaxy is attributed to the reduction in the effective stress experienced by the film due to the presence of antiphase boundaries (APBs) that enable the film to maintain coherency with the substrate at large thickness. However, the stress accommodation in the film depends upon the nature and density of the APBs.
Science Foundation Ireland
Keywords:Atomic, molecular and chemical physics
Series/Report no:Journal of Applied Physics