Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes
DONEGAN, JOHN FRANCIS
FLOOD, EDWARD ANTHONY
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Citation:O'Dowd, J, Guo, WH, Lynch, M, Flood, E, Bradley, AL, Donegan, JF, Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes, ELECTRONICS LETTERS, 46, 12, 2010, 854 - 856
A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm.
Science Foundation Ireland
Series/Report no:ELECTRONICS LETTERS