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dc.contributor.authorMC GOVERN, IGNATIUS
dc.date.accessioned2010-04-28T16:40:44Z
dc.date.available2010-04-28T16:40:44Z
dc.date.issued1988
dc.date.submitted1988en
dc.identifier.citationMcLean, A.B., McGovern, I.T., Stephens, C., Wilke, W.G., Haak, H., Horn, K., Braun, W., Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110) , Physical Review B, 38, 9, 1988, 6330-6333en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/39262
dc.descriptionPUBLISHEDen
dc.description.abstractThe adsorption of Al overlayers on the clean, cleaved InP(110) surface has been studied, with the InP substrates at room and low (120 K) temperatures, using synchrotron radiation excited soft-x-ray photoemission spectroscopy. This interface exhibits a well-documented exchange reaction at room temperature, and a visual comparison of the spectra taken at 300 and 120 K suggests that this reaction is inhibited at 120 K. However, there are also significant changes in the interface growth mode as the temperature is lowered. The reacted indium feature exhibits a coverage-dependent binding energy, so that its spectral weight is obscured by overlap with the bulk indium feature. Moreover, escape-depth considerations invalidate a simple comparison of reactivity at the two temperatures.en
dc.format.extent6330-6333en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review B;
dc.relation.ispartofseries38;
dc.relation.ispartofseries9;
dc.rightsYen
dc.subjectPhysics
dc.titleDependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110)en
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/imcgovrn
dc.identifier.rssinternalid64542


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