High-pressure Raman spectroscopy of graphene
Citation:
Proctor JE, Gregoryanz E, Novoselov KS, Lotya M, Coleman JN, Halsall MP, High-pressure Raman spectroscopy of graphene, Physical Review B, 80, 7, 2009, 073408Download Item:
High-pressure.pdf (Published (publisher's copy) - Peer Reviewed) 337.6Kb
Abstract:
In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene
samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene
adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of
graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell
to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our
results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.
Author's Homepage:
http://people.tcd.ie/colemajDescription:
PUBLISHED
Author: COLEMAN, JONATHAN NESBIT
Type of material:
Journal ArticleCollections:
Series/Report no:
Physical Review B80
7
Availability:
Full text availableLicences: