Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature
Citation:C. Jordan, J. F. Donegan, J. Hegarty, B. J. Roycroft, S. Taniguchi, T. Hino, E. Kato, N. Noguchi, and A. Ishibashi, Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature, Applied Physics Letters, 74, 1999, 3359 - 3361
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Photoluminescence lifetimes have been measured at room temperature as a function of carrier density in ZnCdSe/ZnSSe quantum wells. We show that, at low carrier density (53109?5 31010 cm22), nonradiative recombination dominates, while radiative recombination becomes more dominant as the carrier density is increased from 531010 to 531011 cm22. Above ;5 31011 cm22, band filling effects are shown to produce a saturation of the lifetimes. A simple rate equation model approach can be used to describe the carrier density dependence of the photoluminescence decay data obtained on a wide range of samples. A representative band-to-band recombination coefficient of 831024 cm2 s21 and a Shockley?Read?Hall rate of 7.33107 s21 were determined for one of the better samples studied. We believe that the excellent quality of our samples has allowed for the radiative recombination coefficient to be characterized accurately at room temperature.
Type of material:Journal Article
Series/Report no:Applied Physics Letters
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