Composition and Stress Analysis in Si/SiGe Structures
Citation:
J. McCarthy, S. Bhattacharya, T.S. Perova, R.A. Moore, H. Gamble, and B. M. Armstrong, Composition and Stress Analysis in Si/SiGe Structures, Proceedings of IEEE 1st International Conference, Acapulko, Mexico, 24-27 June 2004, IEEE, 2004, 226 - 230Download Item:
Abstract:
Strained Si tecbnology enables improvements in
CMOS performance and functionality via replacement of the
bulk, cubic-crystal Si substrate witb a Si substrate that contains
a tetragonally distorted, biaxially strained Si thin f h at the
surface. Here we use micro-Raman spectroscopy to enable us to
characterise growth processes of strained silicon, and to
characterise the resulting level of strainlstress in the silicon and
the effect it has on the underlying layer of graded SiGe.
Sponsor
Grant Number
Higher Education Authority (HEA)
Author's Homepage:
http://people.tcd.ie/rmoorehttp://people.tcd.ie/perovat
Description:
PUBLISHEDISBN 0-7803-8532-2
Acapulko, Mexico
Author: MOORE, ROBERT; PEROVA, TANIA
Other Titles:
Proceedings of IEEE 1st International ConferencePublisher:
IEEEType of material:
Conference PaperAvailability:
Full text availableKeywords:
Electronic & Electrical EngineeringDOI:
http://dx.doi.org/10.1109/ICEEE.2004.1433882Metadata
Show full item recordLicences: