Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers
Citation:
S. Chakraborty, S.K. Samanta, S. Bhattacharya, J. McCarthy, B.M. Armstrong, H.S. Gamble, G.K. Dalapati, S. Das, T. Perova, R.A. Moore and C.K. Maiti `Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers? in proceedings of the IEEE 24th International Conference on Microelectronics (MIEL-2004), NIS, Serbia and Montenegro, 16-19 May, 24, (2), 2004, pp 405 - 407Download Item:
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Abstract:
The electrical properties of ultrathin high-k Zr02 gate
dielectric films dcposited on strained Gc-rich layers using
microwave plasma enhanced chemical vapor deposition (PECVD)
technique at a low temperature (150'C) have been studied. The
strained Ge-rich heterolaycrs have been analyzed by transmission
elcctron microscopy (TEM) and Raman spectra. X-ray
photoclectron spectroscopy (XPS) has been used for analysis of
chemical compositions of the deposited 2102 films. The fixed
oxide charge density (Qdq) and interface state density (D;,) are
found to be 4.8 x 10" cm~ 2an d 5 . 1 ~ 1 0 e' ~V -'mi2, respectively.
The capacitance-voltage (C-V) characteristics and current-voltage
(I-V) characteristics before and after constant current stressing
exhibit good electrical properties and thus indicate the suitability
of these films for future microelectronic applications.
Author's Homepage:
http://people.tcd.ie/rmoorehttp://people.tcd.ie/perovat
Description:
PUBLISHED
Author: PEROVA, TANIA; MOORE, ALAN
Publisher:
IEEEType of material:
Conference PaperSeries/Report no:
242
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Full text availableKeywords:
Mechanical and Manufacturing EngineeringLicences: