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dc.contributor.authorPEROVA, TANIA
dc.date.accessioned2009-10-28T15:39:46Z
dc.date.available2009-10-28T15:39:46Z
dc.date.issued2009
dc.date.submitted2009en
dc.identifier.citationJoanna Wasyluk, Tatiana S. Perova and Francoise Meyer `Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopy? in Thin Solid Films, 2009en
dc.identifier.otherY
dc.identifier.other62002
dc.identifier.urihttp://hdl.handle.net/2262/34387
dc.descriptionIN_PRESSen
dc.description.abstractThe effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si1-x-yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The dependence of the Raman intensities of the carbon local modes and the Si-Si modes versus carbon content was analysed. A linear dependence has been revealed for the integrated and peak intensities of these vibrational modes versus C content for samples with x ? 16%. This shows that Raman scattering measurements can be utilised for determination of the substitutional carbon content in SiGeC layers with a Ge content up to 16%.en
dc.description.sponsorshipJ. Wasyluk acknowledges IRCSET Ireland, Postgraduate Award for the financial support.en
dc.format.extent104617 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherElsevieren
dc.relation.ispartofseriesThin Solid Filmsen
dc.rightsYen
dc.subjectRaman spectroscopy; SiGeC layer; stress analysis; substitutional carbonen
dc.titleDetermination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopyen
dc.typeJournal Articleen
dc.typeJournal Articleen
dc.contributor.sponsorIrish Research Council for Science Engineering and Technology
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/perovat
dc.identifier.rssurihttp://dx.doi.org/10.1016/j.tsf.2009.10.076


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