Magnetite Schottky barriers on GaAs substrates
Citation:S.M.Watts, C. Boothman, S. van Dijken & J.M.D. Coey 'Magnetite Schottky barriers on GaAs substrates' in Applied Physics Letters, 86, 2005, 212108
Magnetite Schottky.pdf (published (publisher copy) peer-reviewed) 318.8Kb
Thin films of HfO2 produced by pulsed-laser deposition on sapphire, yttria-stabilized zirconia, or silicon substrates show ferromagnetic magnetization curves with little hysteresis and extrapolated Curie temperatures far in excess of 400 K. The moment does not scale with film thickness, but in terms of substrate area it is typically in the range 150?400 ?B nm?2. The magnetization exhibits a remarkable anisotropy, which depends on texture and substrate orientation. Pure HfO2 powder develops a weak magnetic moment on heating in vacuum, which is eliminated on annealing in oxygen. Lattice defects are the likely source of the magnetism.
Science Foundation Ireland
Publisher:American Institute of Physics
Series/Report no:Applied Physics Letters
Availability:Full text available