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  • Origin of power fluctuations in GaN resonant-cavity light-emitting diodes 

    Bradley, Louise; Roycroft, Brendan; Akhter, Mahbub; Maaskant, Pleun; Corbett, Brian; Shaw, Alan; de Mierry, Phillipe; Poisson, Marie-Antoinette (2004)
    Resonant-cavity light-emitting diodes (RCLEDs) with multiple InGaN/GaN quantum wells have been grown on sapphire substrates. The emission was through the substrate, and the top contact consisted of a highly reflecting Pd/Ag ...