dc.contributor.author | PEROVA, TANIA | |
dc.contributor.author | Rukhlenko, I. D. | |
dc.contributor.author | Fedorov, A. V. | |
dc.contributor.author | Baranov, A. V. | |
dc.contributor.author | Berwick, k. | |
dc.date.accessioned | 2008-06-03T15:38:35Z | |
dc.date.available | 2008-06-03T15:38:35Z | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008 | en |
dc.identifier.citation | Rukhlenko, I. D. and Fedorov, A. V. and Baranov, A. V. and Perova, T. S. and Berwick, K. 'Tip-enhanced secondary emission of a semiconductor quantum dot'. Physical Review B, 77, (4), 2008, pp. 045331/1 ? 045331/10. | en |
dc.identifier.other | Y | |
dc.identifier.other | Y | en |
dc.identifier.uri | http://hdl.handle.net/2262/16766 | |
dc.description | PUBLISHED | en |
dc.description.abstract | The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has
been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon
modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are
reported. We find the critical points in the interface plasmon density of states for multilayered structures results
in enhanced quantum dot intraband carrier relaxation when compared to that for a single heterostructure. A
detailed discussion is made of the relaxation rate and the spectral position dependencies on the quantum dot
layer thickness as well as on the dopant concentration. The material system considered was a p-Si/SiO2 / air
heterostructure with Ge quantum dots embedded in an SiO2 layer. This structure is typical of those used in
technical applications. | en |
dc.format.extent | 045331/1 | en |
dc.format.extent | 045331/10 | en |
dc.format.extent | 191118 bytes | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.relation.ispartofseries | 045331 | en |
dc.rights | Y | en |
dc.subject | Tip-enhanced secondary emission | en |
dc.subject | semiconductor quantum dots | en |
dc.title | Tip-enhanced secondary emission of a semiconductor quantum dot | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/perovat | |
dc.identifier.rssinternalid | 51475 | |
dc.identifier.rssuri | http://dx.doi.org/10.1117/12.604833 | |