Browsing School of Physics by Subject "II-VI semiconductors"
Now showing items 1-3 of 3
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Defect annealing in a II-VI laser diode structure under intense optical excitation
(1998)Defect annealing under intense pulsed optical excitation has been observed in a II?VI laser diode structure at room temperature. More than one order of magnitude increase in photoluminescence intensity has been obtained ... -
Large Energy Transfer Distance to a plane of Gold Nanoparticles
(2012)The quenching of emission in proximity to metallic surfaces via non-radiative energy transfer is studied for sensing applications. It can also be used for the measurement of distances on the nanoscale. We report on energy ... -
Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well
(American Institute of Physics, 1997)We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ~ 500 nm. We measured the ambipolar ...