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  • Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation 

    Duesberg, Georg; Mc Evoy, Niall; O'Brien, Maria; Kim, HyunJeong; Yim, Chanyoung; Marcia, Mario; Hauke, Frank; Hirsh, Andreas; Kim, Gyu-Tae; Duesberg, Georg S.; Kim, WungYeon (2018)
    Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapourdeposition (CVD) on SiO2are reported. The dangling-bond-freesurface of MoS2was functionalised ...