Exchange-biased magnetic tunnel junctions with antiferromagnetic epsilon-Mn3Ga
File Type:
PDFItem Type:
Journal ArticleDate:
2012Access:
OpenAccessCitation:
Kurt, H, Rode, K, Tokuc, H, Stamenov, P, Venkatesan, M, Coey, JMD, Exchange-biased magnetic tunnel junctions with antiferromagnetic epsilon-Mn3Ga, Applied Physics Letters, 101, 2012, 232402-Download Item:
1.4768941.pdf (Published (publisher's copy)) 851.8Kb
Abstract:
Oriented c-axis films of the hexagonal triangular antiferromagnetic ?-Mn3Ga have been used in bottom-pinned synthetic antiferromagnetmagnetic tunnel junctions with MgO barriers, which show up to 150% tunneling magnetoresistance at room temperature.Exchange bias fields as high as 150?mT can be achieved for samples field-cooled from 100??C. Thin films of the antiferromagnet have a Neel temperature in excess of 650?K and provide an interface exchange energy with CoFe of 0.09 mJ m?2. They show an isotropic uncompensated magnetization of M s?=?48?kA m?1, with a coercivity? 0 H c > 3?T.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
10/IN1.13006
Author's Homepage:
http://people.tcd.ie/jcoeyhttp://people.tcd.ie/rodek
http://people.tcd.ie/stamenp
http://people.tcd.ie/venkatem
Description:
PUBLISHEDType of material:
Journal ArticleCollections:
Series/Report no:
Applied Physics Letters101
Availability:
Full text availableKeywords:
PhysicsDOI:
http://dx.doi.org/10.1063/1.4768941Licences: