Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals
Citation:
S.A. Dyakov, D.M. Zhigunov, A. Hartel, M. Zacharias, T.S. Perova and V.Yu. Timoshenko, Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals, Applied Physics Letters, 100, 2012, 061908-1 - 061908-4Download Item:
APPLAB_100_6_061908_1.pdf (Published (author's copy) - Peer Reviewed) 669.0Kb
Abstract:
Using the model of oscillating dipoles, we simulated the photoluminescence intensity of a
triple-layered structure where the silicon nanocrystals layer was enclosed by buffer and capping
silicon dioxide layers. It was found that a structure with an optimized buffer layer thickness exhibited
photoluminescence which was approximately 20 times more intense than that from the structure
without a buffer layer. Theoretical simulations were verified by photoluminescence measurements
for the corresponding structures with silicon nanocrystals fabricated by plasma enhanced chemical
vapour deposition.
Sponsor
Grant Number
Irish Research Council for Science and Engineering Technology (IRCSET)
Postgraduate Award, 2008 - S.Dyakov
Trinity Foundation
4th year PhD extension - S.Dyakov
Author's Homepage:
http://people.tcd.ie/perovatDescription:
PUBLISHED
Author: PEROVA, TANIA
Type of material:
Journal ArticleSeries/Report no:
Applied Physics Letters100
Availability:
Full text availableSubject (TCD):
Nanoscience & MaterialsLicences: