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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/65683

Title: Operating mechanism of the organic metal-semiconductor field-effect transistor (OMESFET)
Keywords: Physical Sciences
Issue Date: 1-Dec-2011
23-Nov-2011
Publisher: EDP Sciences
Abstract: Abstract Organic metal-semiconductor field-effect transistors (OMESFETs) were fabricated with a polycrystalline organic semiconductor (pentacene) and characterized in order to systematically analyze their operation mechanism. Impedance measurements confirmed full depletion of the thick pentacene film (1 μm) due to the low doping concentration of unintentional doping (typically less than 1014 cm−3). The necessity of developing a specific device model for OMESFET is emphasized as the classical (inorganic) MESFET theory based on the depletion modulation is not applicable to a fully-depleted organic semiconductor. By means of joint electrical measurements and numerical simulation, it is pointed out that the gate voltage controls the bulk distribution of injected carriers, so that the competition between the gate and drain currents is critical for determining the operation mode. Finally, the geometrical effect is investigated with comparing a number of transistors with various channel widths and lengths.
URI: http://hdl.handle.net/2262/65683
ISSN: 1286-0042 (pISSN)
1286-0050 (eISSN)
1286-0042 (ISSN)
DOI: 10.1051/epjap/2011110119
Rights: © EDP Sciences, 2011
EDP Sciences, 2011
Affiliation: 91128 Palaiseau - FRANCE (Kim, C.H.)
91128 Palaiseau - FRANCE (Tondelier, D.)
91128 Palaiseau - FRANCE (Geffroy, B.)
91191 Gif-sur-Yvette - FRANCE (Geffroy, B.)
91128 Palaiseau - FRANCE (Bonnassieux, Y.)
91128 Palaiseau - FRANCE (Horowitz, G.)
Appears in Collections:PEER Publications

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