T.S. Perova, B.M. Armstrong, J. Wasyluk, P. Baine, P. Rainey, S.J.N. Mitchell, D.W. McNeill, H.S. Gamble, and R. Hurley, , Investigation of germanium implanted with hydrogen for layer transfer applications, Solid State Phenomena, XIV International Conference on "Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria, 25-30 September 2011, 178-179, 2011, 295 - 300
The technology for thin Ge layer transfer by hydrogen ion-cut process is characterised in this work. Experiments were carried out to determine suitable hydrogen ion implantation doses in germanium for the low temperature ion cut process by examining the formation of blisters on implanted samples. Raman and Spreading Resistance Profiling (SRP) have been used to analyse defects in germanium caused by hydrogen implants. Bevelling has been used to facilitate probing beyond the laser penetration depth. Results of Raman mapping along the projection area reveal that after post implant annealing at 400 oC, some crystal damage remains, while at 600 oC, the crystal damage has been repaired. SRP shows that some amount of hydrogen acceptor states (~1Î1016 acceptors/cm2) remain after 600 oC. These are thought to be vacancy-related point defect clusters.
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