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Title: Three-state dual spin valve structure
Sponsor: Marie Curie
Science Foundation Ireland
Author's Homepage:
Keywords: Condensed matter physics
Thin films
Issue Date: 2010
Citation: Chun, B.S., Fowley, C., Abid, M., Coey, J.M.D., Three-state dual spin valve structure , Journal of Physics D: Applied Physics, 43, 2,, 2010, 025002 -
Series/Report no.: Journal of Physics D: Applied Physics
Abstract: A dual spin valve is built with exchange bias on the top and bottom pinned layers and a central free layer. By suitable choice of the antiferromagnetic and ferromagnetic layer thicknesses, it is possible to separate the three magnetization switching fields and produce a staircase magnetoresistive curve. The maximum magnetoresistance (MR) ratio is 7.6% for current-perpendicular-to-plane and 6.3% for current-in-plane geometries with intermediate MRs of 3.9% and 3.0%, respectively. The use of exchange bias in a multistate memory device is discussed.
Description: PUBLISHED
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Appears in Collections:Physics (Scholarly Publications)

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