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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/59136

Title: Critical field behavior and antiband instability under controlled surface electromigration on Si(111)
Author: SHVETS, IGOR
USOV, VICTOR
Sponsor: 
Name Grant Number
06 IN.1/I91

Author's Homepage: http://people.tcd.ie/ivchvets
http://people.tcd.ie/usovv
Keywords: Fluids and plasma physics
Si(111)
Issue Date: 2011
Citation: C. O Coileain, V. Usov, and I. V. Shvets, Critical field behavior and antiband instability under controlled surface electromigration on Si(111), Physical Review B, 84, 7, 2011, 075318
Series/Report no.: Physical Review B
84
7
Abstract: In this study we investigate step bunching and antiband surface instabilities on Si(111). We experimentally study the effects of a controlled electromigration field on the onset of antibands. We analyze the initial stage of antiband formation on step bunched surfaces under conditions of constant temperature of 1270 °C, while systematically varying the applied electromigration field. The relationship between the electromigration field and minimum terrace width required to initiate the antiband formation has been established. Also, we systematically measured values of the critical electromigration field, which is required to initiate the step-bunching process on Si(111) at 1130 °C (regime II) and 1270 °C (regime III). The dependence of the critical field on the mean atomic terrace width has been investigated and discussed.
Description: PUBLISHED
URI: http://hdl.handle.net/2262/59136
Appears in Collections:Physics (Scholarly Publications)

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