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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/58656

Title: Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi-tile-electrode plasma source
Author: ADLEY, DAVID
PEROVA, TATIANA
Sponsor: Irish Research Council for Science Engineering and Technology
Author's Homepage: http://people.tcd.ie/perovat
Keywords: Condensed matter physics
thin films
Issue Date: 2011
Publisher: Elsevier
Citation: E. Monaghan, T. Michna, C. Gaman, D. O'Farrel, K. Ryan, D. Adley, T.S. Perova, B. Drews, M. Jaskot, A.R. Ellingboe, Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi-tile-electrode plasma source, Thin Solid Films, 519, 20, 2011, 6884-6886
Series/Report no.: Thin Solid Films;
519;
20;
Abstract: Large area (600 × 720 mm) depositions of hydrogenated microcrystalline silicon (μc-Si:H) have been achieved at high deposition rates using a scalable, multi-tile electrode topology. Depositions have shown local results of μc-Si:H deposited with SiH4 concentrations of up to 20% and at rates of up to 15 Å/s. Of particular interest for this electrode topology is the material across the inter-tile gap. Here we present measurements of the deposition uniformity across the inter-tile gap as well as the material characteristics of the layers. The behaviour of the crystalline fraction, χc is observed using Raman spectroscopy, x-ray diffractometry, and dark/light conductivity measurements. A qualitative interpretation of these results is presented, relating them to depletion of SiH4 in the plasma.
Description: PUBLISHED
URI: http://hdl.handle.net/2262/58656
Related links: http://dx.doi.org.elib.tcd.ie/10.1016/j.tsf.2011.04.092
Appears in Collections:Electronic & Electrical Eng (Scholarly Publications)

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